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  ?2008 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729-4681 ? ? phone (631) 586-7600 ? fax (631) 242-9798 ? www.sensitron.com ? sales@sensitron.com ? sensitron ______ semiconductor technical data data sheet 956, rev. b hermetic power schottky rectifier very low forward voltage drop applications: ? switching power supply ? converters ? free-wheeling diodes ? polarity protection diode features: ? soft reverse recovery at low and high temperature ? very low forward voltage drop ? low reverse leakage current ? low power loss, high efficiency ? high surge capacity ? guard ring for enhanced durability and long term reliability ? add a ?c? after the shd for ceramic seals (shdc125446) maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 200 v max. average forward current common cathode / anode i f(av) 50% duty cycle, rectangular wave form 30 a max. average forward current single / doubler i f(av) 50% duty cycle, rectangular wave form 15 a max. peak one cycle surge current non-repetitive per leg i fsm 8.3 ms, half sine wave (per leg) 200 a non-repetitive avalanche energy per leg e as t j = 25 c, i as = 0.75 a, l = 40mh 16 mj repetitive avalanche current per leg i ar i as decay linearly to 0 in 1 s ? limited by t j max v a =1.5v r 0.75 a thermal resistance (per leg) r jc - 0.94 c/w max. junction temperature t j - -65 to +200 c max. storage temperature t stg - -65 to +175 c electrical characteristics: characteristics symbol condition max. units max. forward voltage drop v f1 @ 30a, pulse, t j = 25 c 1.09 v (per leg) v f2 @ 30a, pulse, t j = 125 c 0.93 v max. reverse current (per leg) i r1 @v r = 200v, pulse, t j = 25 c 0.7 ma i r2 @v r = 200v, pulse, t j = 125 c 16 ma max. junction capacitance (per leg) c t @v r = 5v, t c = 25 c f sig = 1mhz, v sig = 50mv (p-p) 600 pf max. reverse recovery time t rr i f = 0.5 a, i r = 1.0 a, i rm = 0.25 a, t j = 25 c 50 nsec shd125446 shd125446p shd125446n shd125446d
?2008 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729-4681 ? ? phone (631) 586-7600 ? fax (631) 242-9798 ? www.sensitron.com ? sales@sensitron.com ? technical data data sheet 956, rev. b mechanical dimensions: in inches / mm single common cathode 1 2 3 1 2 3 common anode doubler 1 2 3 1 2 3 pinout table type pin 1 pin 2 pin 3 single rectifier cathode anode anode dual rectifier, common cathode (p) anode 1 common cathode anode 2 dual rectifier, common anode (n) cathode 1 common anode cathode 2 dual rectifier, doubler (d) anode cathode/ anode cathode curves shown are for bare die only. 0.0 0.2 0.4 0.6 0.8 1.0 forward voltage drop - v f (v) 10 -2 10 -1 10 0 10 1 instantaneous forward current - i f (a) typical forward characteristics 125 c 200 c 175 c 25 c 0 40 80 120 160 200 240 reverse voltage - v r (v) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 instantaneous reverse current - i r (ma) typical reverse characteristics 25 c 50 c 75 c 100 c 125 c 150 c 200 c 175 c 0 40 80 120 160 200 240 reverse voltage - v r (v) 0 150 300 450 600 junction capacitance - c t (pf) typical junction capacitance shd125446 shd125446p shd125446n shd125446d to-254 123 .260 .249 (6.60 6.32) .050 .040 (1.27 1.02) .150(3.81) bsc .545 .535 (13.84 13.58) .545 .535 (13.84 13.60) .800 .790 (20.32 20.07) .685 .665 (17.40 16.89) 1.235 1.195 (31.37 30.35) .045 .035 (1.14 0.89) 3 places .150(3.81) bsc 2 places .149 .139 (3.78 3.53) dia.
?2008 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729-4681 ? ? phone (631) 586-7600 ? fax (631) 242-9798 ? www.sensitron.com ? sales@sensitron.com ? technical data data sheet 956, rev. b shd125446 shd125446p shd125446n shd125446d disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change without prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety s hould be ensured by using semi conductor devices that featur e assured safety or by m eans of users? fail-safe precautions or other arrangement . 3- in no event shall sensitron semiconductor be liable for any dam ages that may result from an accident or any other cause duri ng operation of the user?s units according to the datas heet(s). sensitron semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of info rmation, products or circuits described in the datasheets. 4- in no event shall sensitron semiconductor be liable for any fa ilure in a semiconductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s ) under any patents or other rights of any third party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any form, in whole or par t, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be ap plied to that purpose by their direct purchasers or any thir d party. when exporting these products (technolog ies), the necessary procedures are to be taken in accordance with related laws and regulatio ns.


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